US PATENT SUBCLASS 257 / 606
.~.~ Subsurface breakdown

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

603  DF  AVALANCHE DIODE (E.G., SO-CALLED "ZENER" DIODE HAVING BREAKDOWN VOLTAGE GREATER THAN 6 VOLTS) {2}
605  DF  .~ With means to limit area of breakdown (e.g., guard ring having higher breakdown voltage) {1}
606.~.~ Subsurface breakdown

DEFINITION

Classification: 257/606

Subsurface breakdown:

(under subclass 605) Subject matter wherein the voltage breakdown occurs below the surface of the device.