US PATENT SUBCLASS 257 / 604
.~ Microwave transit time device (e.g., IMPATT diode)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

603  DF  AVALANCHE DIODE (E.G., SO-CALLED "ZENER" DIODE HAVING BREAKDOWN VOLTAGE GREATER THAN 6 VOLTS) {2}
604.~ Microwave transit time device (e.g., IMPATT diode)

DEFINITION

Classification: 257/604

Microwave transit time device (e.g., IMPATT diode):

(under subclass 603) Subject matter wherein the device is structured to operate as a transit time device at microwave frequencies, the frequency at which it operates being determined by the transit time of charge carriers through the depletion region which extends on both sides of the reverse biased junction (e.g., an Impact ionization avalanche transit time (IMPATT) diode).