US PATENT SUBCLASS 257 / 467
.~ Temperature


Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

414  DF  RESPONSIVE TO NON-ELECTRICAL SIGNAL (E.G., CHEMICAL, STRESS, LIGHT, OR MAGNETIC FIELD SENSORS) {4}
467.~ Temperature {3}
468  DF  .~.~> Semiconductor device operated at cryogenic temperature
469  DF  .~.~> With means to reduce temperature sensitivity (e.g., reduction of temperature sensitivity of junction breakdown voltage by using a compensating element)
470  DF  .~.~> Pn junction adapted as temperature sensor


DEFINITION

Classification: 257/467

Temperature:

(under subclass 414) Subject matter wherein the non-electrical signal to which the device responds is thermal energy.

(1) Note. Infrared energy incident on the active junction which does not cause significant thermal heating of the device is classified in subclass 431.

SEE OR SEARCH CLASS

438, Semiconductor Device Manufacturing: Process, particularly

54+, for methods of making a temperature responsive semiconductor device.