US PATENT SUBCLASS 257 / 430
.~.~.~ With active region having effective impurity concentration less than 1012 atoms/cm3

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

414  DF  RESPONSIVE TO NON-ELECTRICAL SIGNAL (E.G., CHEMICAL, STRESS, LIGHT, OR MAGNETIC FIELD SENSORS) {4}
428  DF  .~ Electromagnetic or particle radiation {2}
429  DF  .~.~ Charged or elementary particles {1}
430.~.~.~ With active region having effective impurity concentration less than 1012 atoms/cm3

DEFINITION

Classification: 257/430

With active region having effective impurity concentration less than 10[supscrpt]12[end supscrpt] atoms/cm[supscrpt]3[end supscrpt]:

(under subclass 429) Subject matter wherein the active region of the device has an effective impurity ion dopant concentration less than 10[supscrpt]12[end supscrpt] atoms/cm[supscrpt]3[end supscrpt].