US PATENT SUBCLASS 257 / 29
.~ Ballistic transport device (e.g., hot electron transistor)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

9  DF  THIN ACTIVE PHYSICAL LAYER WHICH IS (1) AN ACTIVE POTENTIAL WELL LAYER THIN ENOUGH TO ESTABLISH DISCRETE QUANTUM ENERGY LEVELS OR (2) AN ACTIVE BARRIER LAYER THIN ENOUGH TO PERMIT QUANTUM MECHANICAL TUNNELING OR (3) AN ACTIVE LAYER THIN ENOUGH TO PERMIT CARRIER TRANSMISSION WITH SUBSTANTIALLY NO SCATTERING (E.G., SUPERLATTICE, QUANTUM WELL, OR BALLISTIC TRANSPORT DEVICE) {5}
29.~ Ballistic transport device (e.g., hot electron transistor)

DEFINITION

Classification: 257/29

Ballistic transport device (e.g., hot electron transistor):

(under subclass 9) Subject matter in which an active layer is present through which carriers pass, which active layer is thinner than the mean free path of the carriers in the material in that layer, so that carriers can pass through the layer without scattering.

(1) Note. Carriers are typically injected into the ballistic transport layer as "hot" carriers, having an energy, in the case of electrons, substantially greater than the minimum of the conduction band, or in the case of holes, substantially lower than the maximum of the valence band.