US PATENT SUBCLASS 257 / 28
.~ Non-heterojunction superlattice (e.g., doping superlattice or alternating metal and insulator layers)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

9  DF  THIN ACTIVE PHYSICAL LAYER WHICH IS (1) AN ACTIVE POTENTIAL WELL LAYER THIN ENOUGH TO ESTABLISH DISCRETE QUANTUM ENERGY LEVELS OR (2) AN ACTIVE BARRIER LAYER THIN ENOUGH TO PERMIT QUANTUM MECHANICAL TUNNELING OR (3) AN ACTIVE LAYER THIN ENOUGH TO PERMIT CARRIER TRANSMISSION WITH SUBSTANTIALLY NO SCATTERING (E.G., SUPERLATTICE, QUANTUM WELL, OR BALLISTIC TRANSPORT DEVICE) {5}
28.~ Non-heterojunction superlattice (e.g., doping superlattice or alternating metal and insulator layers)

DEFINITION

Classification: 257/28

Non-heterojunction superlattice (e.g., doping superlattice or alternating metal and insulator layers):

(under subclass 9) Subject matter wherein there are a plurality of active layers and barrier regions, the active layers being sufficiently close to each other that carrier quantum wave functions are spread out over plural active layers and the intervening barriers, and wherein the active layers and barrier regions do not form heterojunctions between different semiconductor materials.

(1) Note. Typically the active layers and barrier layers may be doped with opposite conductivity type dopants. Thicknesses of both the active layers and the barrier layers are typically a few angstroms to a few hundred angstroms (10[supscrpt]-10[end supscrpt] meter) thick.