US PATENT SUBCLASS 257 / 25
.~.~.~ Employing resonant tunneling

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

9  DF  THIN ACTIVE PHYSICAL LAYER WHICH IS (1) AN ACTIVE POTENTIAL WELL LAYER THIN ENOUGH TO ESTABLISH DISCRETE QUANTUM ENERGY LEVELS OR (2) AN ACTIVE BARRIER LAYER THIN ENOUGH TO PERMIT QUANTUM MECHANICAL TUNNELING OR (3) AN ACTIVE LAYER THIN ENOUGH TO PERMIT CARRIER TRANSMISSION WITH SUBSTANTIALLY NO SCATTERING (E.G., SUPERLATTICE, QUANTUM WELL, OR BALLISTIC TRANSPORT DEVICE) {5}
12  DF  .~ Heterojunction {3}
14  DF  .~.~ Quantum well {4}
25.~.~.~ Employing resonant tunneling

DEFINITION

Classification: 257/25

Employing resonant tunneling:

(under subclass 14) Subject matter wherein the operation of the device depends not only on carrier charge confinement by the quantum well, but the quantum well layer also acts as an intermediate layer through which carriers pass by resonantly tunneling through both confining barriers and the well.