US PATENT SUBCLASS 257 / 11
.~.~ Combined with a heterojunction involving a III-V compound

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

9  DF  THIN ACTIVE PHYSICAL LAYER WHICH IS (1) AN ACTIVE POTENTIAL WELL LAYER THIN ENOUGH TO ESTABLISH DISCRETE QUANTUM ENERGY LEVELS OR (2) AN ACTIVE BARRIER LAYER THIN ENOUGH TO PERMIT QUANTUM MECHANICAL TUNNELING OR (3) AN ACTIVE LAYER THIN ENOUGH TO PERMIT CARRIER TRANSMISSION WITH SUBSTANTIALLY NO SCATTERING (E.G., SUPERLATTICE, QUANTUM WELL, OR BALLISTIC TRANSPORT DEVICE) {5}
10  DF  .~ Low workfunction layer for electron emission, e.g., photocathode electron emissive layer {1}
11.~.~ Combined with a heterojunction involving a III-V compound

DEFINITION

Classification: 257/11

Combined with a heterojunction involving a III-V compound:

(under subclass 10) Subject matter in which the thin active layer and low workfunction layer for electron emission are combined with a heterojunction, i.e., a transition region between two materials with different energy band gaps, one

material of which is a III-V compound, i.e., a compound wherein one material is found in group III of the periodic table and another material is found in group V of the periodic table.