(under subclass 104) Subject matter wherein the tunnel junction is structured to permit quantum mechanical tunneling of carriers in a reverse bias mode, i.e., when the p-side of the junction is connected to a negative voltage source and the n-side of the junction is connected to a positive voltage source.
(1) Note. In silicon, such conduction occurs when the junction breakdown voltage is less than approximately 5.6 volts.
SEE OR SEARCH CLASS
148, Metal Treatment, digest 174 for treatment of Zener diodes.
323, Electricity: Power Supply or Regulation Systems,
231, for systems using a Zener diode and being in shunt with a load.
327, Miscellaneous Active Electrical Nonlinear Devices, Circuits, and Systems,
194, and 195 for stable state circuits with a zener or back diode respectively; subclass 326 for limiting, clipping, or clamping utilizing a zener diode; subclass 421 for gating circuits having a transistor which utilizes a zener effect; subclass 502 for a gating circuit with zener diode; and subclass 584 for a miscellaneous circuit utilizing a zener diode. 361, Electricity: Electrical Systems and Devices,
197, for relay time delay safety or protection devices including, for example, a Zener diode.
377, Electrical Pulse Counters, Pulse Dividers, or Shift Registers: Circuits and Systems,
128, for pulse counting or dividing chains which include bi-stable semiconductor devices with only two electrodes, e.g., tunnel diodes.
