US PATENT SUBCLASS 117 / 935
.~ Silicon from vapor or gaseous state {C30B 29/06}

Current as of: June, 1999
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117 /   HD   SINGLE-CRYSTAL, ORIENTED-CRYSTAL, AND EPITAXY GROWTH PROCESSES; NON-COATING APPARATUS THEREFOR

928  DF  SINGLE-CRYSTAL OF PURE OR INTENTIONALLY DOPED ELEMENT {C30B 29/02} {5}
935.~ Silicon from vapor or gaseous state {C30B 29/06}

DEFINITION

Classification: 117/935

Silicon from vapor or gaseous state [C30B 29/06]:

A collection of art under art collection 928 disclosing growing silicon single-crystal* grown from the vapor or gaseous state.

SEE OR SEARCH CLASS

252, Compositions,

62.3+, for barrier layer compositions, per se (i.e., dopant* containing semiconductor materials).