US PATENT SUBCLASS 117 / 928
SINGLE-CRYSTAL OF PURE OR INTENTIONALLY DOPED ELEMENT {C30B 29/02}

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use


117 /   HD   SINGLE-CRYSTAL, ORIENTED-CRYSTAL, AND EPITAXY GROWTH PROCESSES; NON-COATING APPARATUS THEREFOR

928SINGLE-CRYSTAL OF PURE OR INTENTIONALLY DOPED ELEMENT {C30B 29/02} {5}
929  DF  .~> Carbon (e.g., diamond) {C30B 29/04}
930  DF  .~> Silicon from solid or gel state {C30B 29/06}
931  DF  .~> Silicon from liquid or supercritical state {C30B 29/06} {3}
935  DF  .~> Silicon from vapor or gaseous state {C30B 29/06}
936  DF  .~> Germanium {C30B 29/08}

DEFINITION

Classification: 117/928

SINGLE-CRYSTAL OF PURE OR INTENTIONALLY DOPED ELEMENT [C30B 29/02]:

(under the class definition) A collection of art which discloses growing a pure or intentionally doped* single-crystal* of an element.

SEE OR SEARCH CLASS

164, Metal Founding,

122.1+, for methods of forming directionally solidified material, especially subclass 122.2 for methods of forming single crystal material, in all cases being non-semiconductor metals*, alloys, or intermetallics in a mold.

252, Compositions,

62.3+, for barrier layer compositions, per se (i.e., dopant* containing semiconductor materials).