US PATENT SUBCLASS 117 / 934
.~.~ By liquid phase epitaxy {C30B 29/06}

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use


117 /   HD   SINGLE-CRYSTAL, ORIENTED-CRYSTAL, AND EPITAXY GROWTH PROCESSES; NON-COATING APPARATUS THEREFOR

928  DF  SINGLE-CRYSTAL OF PURE OR INTENTIONALLY DOPED ELEMENT {C30B 29/02} {5}
931  DF  .~ Silicon from liquid or supercritical state {C30B 29/06} {3}
934.~.~ By liquid phase epitaxy {C30B 29/06}

DEFINITION

Classification: 117/934

By liquid phase epitaxy [C30B 29/06]:

A collection of art under art collection 931 disclosing growing silicon single-crystal* grown from the liquid or supercritical state by a liquid phase epitaxy* technique.