117 / | HD | SINGLE-CRYSTAL, ORIENTED-CRYSTAL, AND EPITAXY GROWTH PROCESSES; NON-COATING APPARATUS THEREFOR |
928 | DF | SINGLE-CRYSTAL OF PURE OR INTENTIONALLY DOPED ELEMENT {C30B 29/02} {5} |
931 | DF | .~ Silicon from liquid or supercritical state {C30B 29/06} {3} |
933 | .~.~ By moving zone (not Verneuil) {C30B 29/06} |