US PATENT SUBCLASS 117 / 80
.~.~.~ Unusable portion contains an oxygen atom (e.g., oxide flux)

Current as of: June, 1999
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117 /   HD   SINGLE-CRYSTAL, ORIENTED-CRYSTAL, AND EPITAXY GROWTH PROCESSES; NON-COATING APPARATUS THEREFOR

11  DF  PROCESSES OF GROWTH FROM LIQUID OR SUPERCRITICAL STATE {7}
73  DF  .~ Havin growth from molten state (e.g., solution melt) {6}
78  DF  .~.~ Precursor composition intentionally different from product (e.g., excess component, non-product forming component, dopant, non-stoichiometric precursor, solvent, flux) {2}
80.~.~.~ Unusable portion contains an oxygen atom (e.g., oxide flux)

DEFINITION

Classification: 117/80

Unusable portion contains an oxygen atom (e.g., oxide flux):

(under subclass 78) Subject matter in which the unusable residual portion of the precursor* contains an oxygen atom (e.g., boric acid, lead oxide).