US PATENT SUBCLASS 117 / 42
.~.~.~ Product has an element in common with the unusable residual portion

Current as of: June, 1999
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117 /   HD   SINGLE-CRYSTAL, ORIENTED-CRYSTAL, AND EPITAXY GROWTH PROCESSES; NON-COATING APPARATUS THEREFOR

11  DF  PROCESSES OF GROWTH FROM LIQUID OR SUPERCRITICAL STATE {7}
37  DF  .~ Having moving solid-liquid-solid region {8}
41  DF  .~.~ Precursor composition intentionally different from product (e.g., excess component, non-product forming component, dopant, non-stoichiometric precursor, travelling solvent, flux) {1}
42.~.~.~ Product has an element in common with the unusable residual portion

DEFINITION

Classification: 117/42

Product has an element in common with the unusable residual portion:

(under subclass 41) Subject matter in which the product single-crystal* contains at least one element in common with the unusable residual portion of the precursor* composition.

(1) Note. The unusable residual portion of the precursor* refers to the material that would be left if the desired single-crystal* product were grown as completely as possible. Examples of processes proper for placement in this subclass are: alumina single-crystal* grown from aluminum solvent or gallium arsenide single-crystal* grown from gallium solvent.