US PATENT SUBCLASS 117 / 41
.~.~ Precursor composition intentionally different from product (e.g., excess component, non-product forming component, dopant, non-stoichiometric precursor, travelling solvent, flux)

Current as of: June, 1999
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117 /   HD   SINGLE-CRYSTAL, ORIENTED-CRYSTAL, AND EPITAXY GROWTH PROCESSES; NON-COATING APPARATUS THEREFOR

11  DF  PROCESSES OF GROWTH FROM LIQUID OR SUPERCRITICAL STATE {7}
37  DF  .~ Having moving solid-liquid-solid region {8}
41.~.~ Precursor composition intentionally different from product (e.g., excess component, non-product forming component, dopant, non-stoichiometric precursor, travelling solvent, flux) {1}
42  DF  .~.~.~> Product has an element in common with the unusable residual portion

DEFINITION

Classification: 117/41

Precursor composition intentionally different from product (e.g., excess component, non-product forming component, dopant, non-stoichiometric precursor, travelling solvent, flux):

(under subclass 37) Subject matter in which the precursor* composition is intentionally different from the single-crystal* product grown therefrom, which results in an unusable residual portion.

(1) Note. The unusable residual portion of the precursor* refers to the material that would be left if the desired single-crystal* product were grown as completely as possible. Examples of processes proper for placement in this subclass are: alumina single-crystal* grown from aluminum solvent or gallium arsenide single-crystal* grown from gallium solvent.

(2) Note. Since the distribution coefficient or segregation factor of dopants* is usually not unity, a process in which a doped crystal is formed is proper for placement here, except

when the reference states that the coefficient or the factor is unity.

(3) Note. Processes in which the liquid has unintended or undesired impurities which are rejected from the crystal at the precursor*-product interface are not proper for placement here.