US PATENT SUBCLASS 117 / 33
.~.~.~ Replenishing of precursor during growth (e.g., continuous method, zone pulling)

Current as of: June, 1999
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117 /   HD   SINGLE-CRYSTAL, ORIENTED-CRYSTAL, AND EPITAXY GROWTH PROCESSES; NON-COATING APPARATUS THEREFOR

11  DF  PROCESSES OF GROWTH FROM LIQUID OR SUPERCRITICAL STATE {7}
13  DF  .~ Having pulling during growth (e.g., Czochralski method, zone drawing) {9}
30  DF  .~.~ With liquid flow control or manipulation during growth (e.g., mixing, replenishing, magnetic levitation, stabilization, convection control, baffle) {3}
33.~.~.~ Replenishing of precursor during growth (e.g., continuous method, zone pulling) {1}
34  DF  .~.~.~.~> Including significant cooling or heating detail

DEFINITION

Classification: 117/33

Replenishing of precursor during growth (e.g., continuous method, zone pulling):

(under subclass 30) Subject matter in which precursor* is replenished or added to the liquid precursor* while growth occurs.

(1) Note. Included here are processes in which the precursor* is added to the crucible* in any form (solid, liquid, or gas), including those arrangements in which a mass of precursor* residing in the crucible* from the inception of growth is liquefied while growth occurs, or those arrangements in which a moving zone is used; i.e., zone pulling.

(2) Note. Cross-referencing to art collection 912 is precluded as unnecessarily duplicative.

SEE OR SEARCH THIS CLASS, SUBCLASS:

31, for replenishment wherein a sectioned crucible* is utilized.