US PATENT SUBCLASS 117 / 22
.~.~.~.~ Forming adjoining crystals of different compositions (e.g., junction)

Current as of: June, 1999
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117 /   HD   SINGLE-CRYSTAL, ORIENTED-CRYSTAL, AND EPITAXY GROWTH PROCESSES; NON-COATING APPARATUS THEREFOR

11  DF  PROCESSES OF GROWTH FROM LIQUID OR SUPERCRITICAL STATE {7}
13  DF  .~ Having pulling during growth (e.g., Czochralski method, zone drawing) {9}
19  DF  .~.~ Forming an intended mixture (excluding mixed crystal) (e.g., doped) {2}
21  DF  .~.~.~ Comprising a semiconductor with a charge carrier impurity {1}
22.~.~.~.~ Forming adjoining crystals of different compositions (e.g., junction)

DEFINITION

Classification: 117/22

Forming adjoining crystals of different compositions (e.g., junction):

(under subclass 21) Subject matter in which adjoining single-crystals* of different composition are formed, either simultaneously or successively.

(1) Note. For placement in this subclass, a reference must claim a process in which both of the adjoining single-crystals* are grown in the claimed process.