US PATENT SUBCLASS 117 / 19
.~.~ Forming an intended mixture (excluding mixed crystal) (e.g., doped)

Current as of: June, 1999
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117 /   HD   SINGLE-CRYSTAL, ORIENTED-CRYSTAL, AND EPITAXY GROWTH PROCESSES; NON-COATING APPARATUS THEREFOR

11  DF  PROCESSES OF GROWTH FROM LIQUID OR SUPERCRITICAL STATE {7}
13  DF  .~ Having pulling during growth (e.g., Czochralski method, zone drawing) {9}
19.~.~ Forming an intended mixture (excluding mixed crystal) (e.g., doped) {2}
20  DF  .~.~.~> Comprising a silicon crystal with oxygen containing impurity
21  DF  .~.~.~> Comprising a semiconductor with a charge carrier impurity {1}

DEFINITION

Classification: 117/19

Forming an intended mixture (excluding mixed crystal) (e.g., doped):

(under subclass 13) Subject matter wherein the process includes an intended or desired mixture in the single-crystal* product, but excluding mixed crystal compositions like GaxAl1-xAs.

(1) Note. Compounds and intermetallics, such as GaAs or InSb, are stoichiometric compounds and hence are not considered mixtures for purposes of placement here.

(2) Note. Unintended or undesirably impure single-crystals* are not considered intended mixtures for purposes of placement here.

SEE OR SEARCH THIS CLASS, SUBCLASS:

2, for processes of doping* subsequent to a single-crystal* growth step.

SEE OR SEARCH CLASS

438, Semiconductor Device Manufacturing: Process, for a process consisting of the single crystal growth of a semiconductor material from the liquid phase which is combined with named operations or treatments, including those noted in the Class 117 definition, section I, C, Note (4).