US PATENT SUBCLASS 117 / 20
.~.~.~ Comprising a silicon crystal with oxygen containing impurity

Current as of: June, 1999
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117 /   HD   SINGLE-CRYSTAL, ORIENTED-CRYSTAL, AND EPITAXY GROWTH PROCESSES; NON-COATING APPARATUS THEREFOR

11  DF  PROCESSES OF GROWTH FROM LIQUID OR SUPERCRITICAL STATE {7}
13  DF  .~ Having pulling during growth (e.g., Czochralski method, zone drawing) {9}
19  DF  .~.~ Forming an intended mixture (excluding mixed crystal) (e.g., doped) {2}
20.~.~.~ Comprising a silicon crystal with oxygen containing impurity

DEFINITION

Classification: 117/20

Comprising a silicon crystal with oxygen containing impurity:

(under subclass 19) Subject matter in which the crystal product is silicon which includes an intended or desired impurity which contains or consists of oxygen.