US PATENT SUBCLASS 117 / 214
.~.~.~ Including details of precursor replenishment

Current as of: June, 1999
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117 /   HD   SINGLE-CRYSTAL, ORIENTED-CRYSTAL, AND EPITAXY GROWTH PROCESSES; NON-COATING APPARATUS THEREFOR

200  DF  APPARATUS {4}
206  DF  .~ For crystallization from liquid or supercritical state {5}
208  DF  .~.~ Seed pulling {7}
214.~.~.~ Including details of precursor replenishment

DEFINITION

Classification: 117/214

Including details of precursor replenishment:

(under subclass 208) Subject matter in which precursor* replenishment means are described in some detail.

(1) Note. Mere provision for precursor* replenishment is not sufficient for placement here.

SEE OR SEARCH THIS CLASS, SUBCLASS:

213, for precursor* replenishment details which involve a sectioned crucible*.