US PATENT SUBCLASS 376 / 183
.~.~ Doping of semiconductors


Current as of: June, 1999
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376 /   HD   INDUCED NUCLEAR REACTIONS: PROCESSES, SYSTEMS, AND ELEMENTS

156  DF  NUCLEAR TRANSMUTATION (E.G., BY MEANS OF PARTICLE OR WAVE ENERGY) {4}
158  DF  .~ By neutron bombardment {10}
183.~.~ Doping of semiconductors


DEFINITION

Classification: 376/183

Doping of semiconductors:

(under subclass 158) Subject matter wherein the material is a semiconductor which contains an element which is converted to a desired dopant by the neutron bombardment.

SEE OR SEARCH CLASS

117, Single-Crystal, Oriented-Crystal, and Epitaxy Growth Processes; Non-Coating Apparatus Therefor, for processes and non-coating apparatus for growing therein-defined single-crystal of all types of materials, and such processes combined with perfecting operations. A process comprising the step of irradiation to produce a nuclear transformation is provided for in Class 376.

438, Semiconductor Device Manufacturing: Process,

512, for methods of introducing an electrically active dopant into a semiconductor region having a combination of diverse steps in which one step involves the conversion of an element into a dopant by nuclear transmutation.