US PATENT SUBCLASS 252 / 62.3 R
BARRIER LAYER DEVICE COMPOSITIONS

Current as of: June, 1999
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252 /   HD   COMPOSITIONS

62.3 RBARRIER LAYER DEVICE COMPOSITIONS {8}
62.3 T  DF  .~> Thermoelectric
62.3 Q  DF  .~> Organic
62.3 E  DF  .~> Free element containing {1}
62.3 GA  DF  .~> Group III element containing binary compound; e.g., Ga, As
62.3 ZB  DF  .~> Groups II and V elements containing binary compund; e.g., zinc, bismuth
62.3 ZT  DF  .~> Groups II and VI elements containing binary compound; e.g., Zn, Te
62.3 V  DF  .~> Group VI element-containing {1}
62.3 C  DF  .~> Binary alloy or carbide; e.g., Al, In, LiC

Unofficial Alpha Subclasses: R T Q E S GA ZB ZT V BT C

DEFINITION

Classification: 252/62.3

(under the class definition) Compositions specialized and designed for use as one member of two members whose interface exhibits barrier layer properties.

(1) Note. A barrier layer device is defined for the purpose of classification as an electrical component consisting of two conductors placed either in contact with each other or separated by an interface layer, to which contacts or terminals have been secured which component has a nonlinear resistance characteristic. The nonlinear resistance characteristic may be such that the device will pass current in one direction when the voltage is applied in one direction but will not pass any appreciable current when the voltage is applied in the other direction (e.g., rectifiers, electrolytic condensers), or will pass a proportionately different amount of current at different values of applied voltage. In the latter case, where the device passes a disapportionate amount of current, to be considered a barrier layer device the nonlinearity must arise as a result of the electrical action of the interface between the two conductors rather than from the characteristics of the conductors. For example, an electrical component having a resistance material which varies its resistance due to inherent changes in temperature with change in applied voltage is not a barrier layer device. Among the types of devices which may have a barrier layer are rectifiers, condensers, transistors and lightning arresters.

SEE OR SEARCH CLASS

75, Specialized Metallurgical Processes, Compositions for Use Therein, Consolidated Metal Powder Compositions, and Loose Metal Particulate Mixtures,

.5, for single metals including those containing a nonmetallic constituent, subclass 236 for a composition having a continuous phase of free metal made by consolidating metal particles and containing carbide, and subclass 245 for such composition having a transition metal base.

117, Single-Crystal, Oriented-Crystal, and Epitaxy Growth Processes; Non-Coating Apparatus Therefor, for processes and non-coating apparatus for growing therein-defined single-crystal of all types of materials, including those which may be suitable as or to produce a barrier layer device. Class 118, Coating Apparatus, generally provides for coating apparatus, including single-crystal (e.g., epitaxy) coating means. 136, Batteries: Thermoelectric and Photoelectric,

236+, for thermoelectric batteries having a particular composition and at least two elements of the battery, particularly subclasses 238 and 239 for semiconductive type.

148, Metal Treatment,

33+, for layered stock material made from compositions of this subclass and for superlattice compositions.

257, Active Solid-State Devices (e.g., Transistors, Solid-State Diodes), for devices which operate based on a barrier region or layer.

361, Electricity: Electrical Systems and Devices,

212+, for discharging or preventing accumulation of electric charge, and subclasses 500+ for electrolytic devices such as electrolytic condensers and rectifiers.

420, Alloys or Metallic Compositions, appropriate subclasses for single metals and alloys or metallic compositions and

903, for a cross reference collection of alloys which are semiconductors.

428, Stock Material or Miscellaneous Articles,

620, for metallic stock material having a semiconductor component.

438, Semiconductor Device Manufacturing: Process, for processes of making semiconductor devices utilizing compositions of this subclass.