US PATENT SUBCLASS 250 / 370.14
.~.~ Particular detection structure (e.g., MOS, PIN)

Current as of: June, 1999
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250 /   HD   RADIANT ENERGY

336.1  DF  INVISIBLE RADIANT ENERGY RESPONSIVE ELECTRIC SIGNALLING {16}
370.01  DF  .~ Semiconductor system {13}
370.14.~.~ Particular detection structure (e.g., MOS, PIN)

DEFINITION

Classification: 250/370.14

Particular detection structure (e.g., MOS, PIN):

(under subclass 370.01) Subject matter wherein the detection means has a specified semiconductor structural arrangement (e.g., a light responsive field effect transistor, or P-I-N diode, etc.).

SEE OR SEARCH CLASS

257, Active Solid-State Devices (e.g., Transistors, Solid-State Diodes), the entire class, for active solid-state

semiconductor devices, per se, which have particular structure.