US PATENT SUBCLASS 117 / 70
.~.~ Growth accompanied by material removal (other than the product) from solution (e.g., solvent evaporation, osmosis)

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use


117 /   HD   SINGLE-CRYSTAL, ORIENTED-CRYSTAL, AND EPITAXY GROWTH PROCESSES; NON-COATING APPARATUS THEREFOR

11  DF  PROCESSES OF GROWTH FROM LIQUID OR SUPERCRITICAL STATE {7}
68  DF  .~ Having growth from a solution comprising a solvent which is liquid at or below 20 degrees Celsius (e.g., aqueous solution) {3}
70.~.~ Growth accompanied by material removal (other than the product) from solution (e.g., solvent evaporation, osmosis)

DEFINITION

Classification: 117/70

Growth accompanied by material removal (other than the product) from solution (e.g., solvent evaporation, osmosis):

(under subclass 68) Subject matter in which material other than the single-crystal* product itself is removed from the liquid during growth; for example, solvent removal by evaporation or by osmosis.

(1) Note. Where a removed material may also be a component of the single-crystal* product, the process is still proper for placement here; for example, evaporating water while growing a hydrated phosphate single-crystal*.