US PATENT SUBCLASS 117 / 53
.~ Forming a single-crystal region by liquefying a region of a single-crystal and adjusting the composition of the liquid (e.g., alloying, regrowth)

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117 /   HD   SINGLE-CRYSTAL, ORIENTED-CRYSTAL, AND EPITAXY GROWTH PROCESSES; NON-COATING APPARATUS THEREFOR

11  DF  PROCESSES OF GROWTH FROM LIQUID OR SUPERCRITICAL STATE {7}
53.~ Forming a single-crystal region by liquefying a region of a single-crystal and adjusting the composition of the liquid (e.g., alloying, regrowth)

DEFINITION

Classification: 117/53

Forming a single-crystal region by liquefying a region of a single-crystal and adjusting the composition of the liquid (e.g., alloying, regrowth):

(under subclass 11) Subject matter in which a region of an existing single-crystal* is liquefied and the composition of the liquid is adjusted (either simultaneously or subsequently) and the liquid is then single-crystallized*.

(1) Note. Typically this process forms a semiconductor junction*.

(2) Note. Cross-referencing to art collections 902 and 923 is precluded as unnecessarily duplicative.

SEE OR SEARCH THIS CLASS, SUBCLASS:

40, for similar processes in which a moving solid-liquid-solid region is effected.