US PATENT SUBCLASS 117 / 44-- .~.~.~ Adjacent single-crystal product regions separately formed (e.g., multiple non-coextensive passes of a scanning laser)

US PATENT SUBCLASS 117 / 44
.~.~.~ Adjacent single-crystal product regions separately formed (e.g., multiple non-coextensive passes of a scanning laser)

Current as of: June, 1999
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117 /	HD	SINGLE-CRYSTAL, ORIENTED-CRYSTAL, AND EPITAXY GROWTH PROCESSES; NON-COATING APPARATUS THEREFOR

11	DF	PROCESSES OF GROWTH FROM LIQUID OR SUPERCRITICAL STATE {7}
37	DF	.~ Having moving solid-liquid-solid region {8}
43	DF	.~.~ Distinctly layered product (e.g., twin, SOI, epitaxial crystallization) {2}
44		.~.~.~ Adjacent single-crystal product regions separately formed (e.g., multiple non-coextensive passes of a scanning laser)

DEFINITION

Classification: 117/44

Adjacent single-crystal product regions separately formed (e.g., multiple non-coextensive passes of a scanning laser):

(under subclass 43) Subject matter in which a liquid precursor* region is formed adjacent to a previously grown single-crystal* product region, and then a single-crystal* product is grown therefrom.

(1) Note. The adjacently formed product region may or may not have a common crystal lattice with the previously (or subsequently) separately formed product region.

(2) Note. Where a liquefying pass completely liquefies a previously formed single-crystal*, the proper classification will be elsewhere, based on the characteristics of the step of single-crystal* growth from the liquid.