US PATENT SUBCLASS 117 / 40
.~.~ Liquid precursor penetrating only a portion of a single-crystal, thereby liquefying it, and single-crystal formation therefrom which adjoins the never-liquefied portion of the single-crystal (e.g., liquid wire migration)

Current as of: June, 1999
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117 /   HD   SINGLE-CRYSTAL, ORIENTED-CRYSTAL, AND EPITAXY GROWTH PROCESSES; NON-COATING APPARATUS THEREFOR

11  DF  PROCESSES OF GROWTH FROM LIQUID OR SUPERCRITICAL STATE {7}
37  DF  .~ Having moving solid-liquid-solid region {8}
40.~.~ Liquid precursor penetrating only a portion of a single-crystal, thereby liquefying it, and single-crystal formation therefrom which adjoins the never-liquefied portion of the single-crystal (e.g., liquid wire migration)

DEFINITION

Classification: 117/40

Liquid precursor penetrating only a portion of a single-crystal, thereby liquefying it, and single-crystal formation therefrom which adjoins the never-liquefied portion of the single-crystal (e.g., liquid wire migration):

(under subclass 37) Subject matter in which a single-crystal* is formed by applying a liquid precursor to liquefy (e.g., melt or dissolve) an existing single-crystal and causing or allowing the liquid region to move into the single-crystal*, thereby penetrating it, and obtaining single-crystal* product from the moving region which adjoins never-liquefied regions of the single-crystal*.

(1) Note. Cross-referencing to subclasses 902 or 923 is precluded as unnecessarily duplicative.

SEE OR SEARCH THIS CLASS, SUBCLASS:

53, for similar processes absent a moving zone in which a region of a single-crystal* is liquified, the liquid composition is adjusted (concurrently or subsequently), and then a single-crystal* is grown.