US PATENT SUBCLASS 117 / 36
.~.~ Precursor intentionally contains an excess component or a non-product appearing component (e.g., solvent, flux, crystal lattice modifier)

Current as of: June, 1999
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117 /   HD   SINGLE-CRYSTAL, ORIENTED-CRYSTAL, AND EPITAXY GROWTH PROCESSES; NON-COATING APPARATUS THEREFOR

11  DF  PROCESSES OF GROWTH FROM LIQUID OR SUPERCRITICAL STATE {7}
13  DF  .~ Having pulling during growth (e.g., Czochralski method, zone drawing) {9}
36.~.~ Precursor intentionally contains an excess component or a non-product appearing component (e.g., solvent, flux, crystal lattice modifier)

DEFINITION

Classification: 117/36

Precursor intentionally contains an excess component or a non-product appearing component (e.g., solvent, flux, crystal lattice modifier):

(under subclass 13) Subject matter in which the precursor* is intentionally formulated to contain non-crystallizing component or an excess of a crystallizing component relative to another crystallizing component.

(1) Note. For example, arsenic in excess molten gallium, from which crystallizes gallium arsenide; all the gallium cannot crystallize due to a stoichiometric deficiency of available arsenic to do so.

(2) Note. Processes in which the liquid has undesired impurities which are rejected from the growing crystal at the precursor*-product interface are not proper for placement here.

SEE OR SEARCH THIS CLASS, SUBCLASS:

19+, for processes of pulling and having an intended impurity such as a dopant*.