PROCESSES OF GROWTH WITH A SUBSEQUENT STEP OF HEAT TREATINGOR DELIBERATE CONTROLLED COOLING OF THE SINGLE-CRYSTAL:
(under the class definition) Subject matter in which the process includes a step subsequent to a claimed single-crystal* growth which includes: (a) the application of heat to the single-crystal* or (b) a specified, deliberate cooling schedule (i.e., the specification of a cooling rate or step, or of one or more temperature plateaus prior to or during cooling down to room temperature).
(1) Note. A specified temperature gradient in the cooling crystal is included here.
(2) Note. The positive recitation of a subsequent step of holding the single-crystal* at a specified temperature, or of cooling at a specified rate, constitutes a heat treatment for placement here. The mere recitation of "heat treatment" or "tempering" or "annealing" or other like terms is not enough for placement in this subclass; such mere recitations will find proper placement in the appropriate crystal growing subclasses, below, based upon the claimed growth step.
(3) Note. A single-crystal* growth step followed by heat treatment to de-twin is proper for placement here.
(4) Note. See the Search Class entries for Class 148 and Class 437 listed below for exceptions.
SEE OR SEARCH THIS CLASS, SUBCLASS:
4+, for processes of crystal formation from the solid state and for per se processes of de-twinning. 11+, for processes which act on single-crystal* and which result in the liquefying thereof and from which a single-crystal* is then grown.
204, for corresponding apparatus other than coating apparatus.
SEE OR SEARCH CLASS
148, Metal Treatment, appropriate subclasses for (a) the class provided for per se processes of non-semiconductor metal* treating or (b) single-crystal* growth of metal, alloy, or intermetallic material combined with a subsequent step of heat treatment (which herein includes controlled cooling) when the purpose of the heat treatment (or controlled cooling) is to modify the internal physical structure or chemical property of a metal, alloy, or intermetallic material. When the subsequent heat treatment (or controlled cooling) merely operates on the single-crystallinity, such as stress or strain annealing or to remove point defects, the combined process is proper for Class 117; when the subsequent heat treatment (or controlled cooling) operates to effect significant metal, alloy, or intermetallic heat treatment (or controlled cooling) purposes, such as solutionizing, homogenizing, or precipitation hardening, then the combined process is proper for Class 148. Class 117 provides for simultaneous or prior perfecting operations combined with single-crystal* growing. See Class 117 definition, section C, (4) Note, for discussion of perfecting operations.
264, Plastic and Nonmetallic Article Shaping or Treating: Processes,
345+, for, per se, processes of heat treating a non-semiconductor, non-metal*, preformed, shaped, or solid article which may be a single-crystal*.
438, Semiconductor Device Manufacturing: Process, appropriate subclasses for (a) per se treatments or operations acting on single-crystal* semiconductor material (e.g., heat treating, doping, etching, coating, etc.) not specifically provided for elsewhere or (b) growing a single-crystal* semiconductor material (i.e., a Class 117 step) combined with named diverse treatments or operations, including those noted in the Class 117 definition, section I, C, (4) Note. Where there are only generic claims and both Class 438 and Class 117 processes are disclosed, or where both Class 438 and Class 117 processes are claimed and the claims are equally comprehensive, the reference is originally placed in Class 438 and cross-referenced to Class 117.
