US PATENT SUBCLASS 117 / 2-- PROCESSES OF GROWTH WITH A SUBSEQUENT STEP ACTING ON THE CRYSTAL TO ADJUST THE IMPURITY AMOUNT (E.G., DIFFUSING, DOPING, GETTERING, IMPLANTING)

US PATENT SUBCLASS 117 / 2
PROCESSES OF GROWTH WITH A SUBSEQUENT STEP ACTING ON THE CRYSTAL TO ADJUST THE IMPURITY AMOUNT (E.G., DIFFUSING, DOPING, GETTERING, IMPLANTING)

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999 Terms of Use

117 /	HD	SINGLE-CRYSTAL, ORIENTED-CRYSTAL, AND EPITAXY GROWTH PROCESSES; NON-COATING APPARATUS THEREFOR

2		PROCESSES OF GROWTH WITH A SUBSEQUENT STEP ACTING ON THE CRYSTAL TO ADJUST THE IMPURITY AMOUNT (E.G., DIFFUSING, DOPING, GETTERING, IMPLANTING)

DEFINITION

Classification: 117/2

PROCESSES OF GROWTH WITH A SUBSEQUENT STEP ACTING ON THE CRYSTAL TO ADJUST THE IMPURITY AMOUNT (E.G., DIFFUSING, DOPING, GETTERING, IMPLANTING):

(under the class definition) Subject matter in which, subsequent to a claimed single-crystal* growing step, the

crystal is treated to remove or add an impurity; e.g., by a diffusion, doping*, gettering*, or implanting process.

SEE OR SEARCH THIS CLASS, SUBCLASS:

3, for like processes in which the impurity is merely redistributed rather than adjusted.

SEE OR SEARCH CLASS

427, Coating Processes, for the per se step, other than as specifically provided for elsewhere (see the reference to Class 438 below).

438, Semiconductor Device Manufacturing: Process, for such processes in which a single crystal of semiconductor material is acted upon and for the per se operation of gettering*, doping*, implanting*, or diffusion acting on the semiconductor material.