(under the class definition) Processes in which two or more independently manipulatable single-crystals* are joined in a specified crystallos:graphic orientation so as to form a single-crystal*.
(1) Note. This subclass is not the proper location for epitaxy* layer overgrowth types of processes since crystals joined in that process originated on a common substrate and hence were not independently manipulatable, such processes will be found below in this class.
SEE OR SEARCH THIS CLASS, SUBCLASS:
4+, for de-twinning processes.
45, for epitaxy* layer overgrowth processes in which a moving solid-liquid-solid region is used.
54+, for liquid phase epitaxy* growth processes.
84+, for vapor phase growth processes such as vapor phase epitaxy*.
SEE OR SEARCH CLASS 228, Metal Fusion Bonding, particularly
121, for bonding of nonmetals with a metal filler.
438, Semiconductor Device Manufacturing: Process,
455+, for bonding of plural semiconductor substrates.
